Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET
نویسندگان
چکیده
Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and challenging owing to the physical limit Si materials. Monolithic three-dimensional (M3D) integration has been considered as a powerful scheme further boost up system performance. Two-dimensional (2D) materials such MoS 2 are potential building blocks for constructing upper-tier transistors their high mobility, atomic thickness, back-end-of-line (BEOL) compatible processes. concept integrate 2D material-based devices with field-effect transistor (FET) technologically important but compatibility yet be experimentally demonstrated. Here, we successfully an n-type monolayer FET p-type fin-shaped 20 nm fin width via M3D technique form complementary inverter. was enabled by deliberately adopting industrially matured techniques, chemical mechanical planarization e-beam evaporation, ensure its existing 3D circuit process semiconductor industry in general. fabricated using low-temperature sequential processes avoid degradation lower-tier devices. n-FETs p-FinFETs display symmetrical transfer characteristics resulting metal-oxide-semiconductor inverter show voltage characteristic maximum gain ~38. This work clearly proves Si-based devices, encouraging development monolithic circuits.
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ژورنال
عنوان ژورنال: npj 2D materials and applications
سال: 2023
ISSN: ['2397-7132']
DOI: https://doi.org/10.1038/s41699-023-00371-7